mr2a08am Everspin Technologies, Inc, mr2a08am Datasheet - Page 4

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mr2a08am

Manufacturer Part Number
mr2a08am
Description
512k X 8 Mram Memory
Manufacturer
Everspin Technologies, Inc
Datasheet

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Everspin Technologies © 2011
2. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any
voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken
to avoid application of any magnetic field more intense than the maximum field intensity specified
in the maximum ratings.
1
2
3
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera-
All voltages are referenced to V
Power dissipation capability depends on package characteristics and use environment.
Parameter
Supply voltage
Voltage on an pin
Output current per pin
Package power dissipation
Temperature under bias
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
Maximum magnetic field during read or standby
tion should be restricted to recommended operating conditions. Exposure to excessive voltages or
magnetic fields could affect device reliability.
2
2
Table 2.1 Absolute Maximum Ratings
SS
.
4
Symbol
V
V
I
P
T
T
T
H
H
OUT
stg
BIAS
Lead
DD
IN
D
Document Number: MR2A08AM Rev. 0, 2/2011
max_write
max_read
Value
-0.5 to 4.0
-0.5 to V
±20
0.600
-45 to 130
-55 to 150
260
2000
8000
1
DD
MR2A08AM
+ 0.5
Unit
V
V
mA
W
°C
°C
°C
A/m
A/m

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