mt4vddt1664hg-335 Micron Semiconductor Products, mt4vddt1664hg-335 Datasheet

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mt4vddt1664hg-335

Manufacturer Part Number
mt4vddt1664hg-335
Description
64mb, 128mb, 256mb X64, Sr 200-pin Ddr Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Features
• 200-pin, small-outline, dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 64MB (8 Meg x 64), 128MB (16 Meg x 64),
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS READ latency (CL) for maximum
• Gold edge contacts
DDR SDRAM SODIMM
MT4VDDT864H – 64MB
MT4VDDT1664H – 128MB
MT4VDDT3264H – 256MB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef8086ea3d/Source: 09005aef8086ea0b
DD4C8_16_32x64H.fm - Rev. D 4/07 EN
Table 1:
(SODIMM)
or 256MB (32 Meg x 64)
architecture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
operation
(64MB); 7.8125µs (128MB, 256MB) maximum
average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-262
-265
= V
DD
= +2.3V to +3.6V
Q = +2.5V (-40B: V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
DD
= V
64MB, 128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM
1
DD
Q = +2.6V)
CL = 3
400
Data Rate (MT/s)
www.micron.com
CL = 2.5
333
333
266
266
266
1
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
• PCB height
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5ns (200 MHz), 400 MT/s, CL = 3
– 6ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
– 31.75mm (1.25in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PCB height: 31.75mm (1.25in)
CL = 2
2. Contact Micron for industrial temperature
3. Not recommended for new designs.
266
266
266
266
200
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
15
15
20
20
A
A
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
15
20
20
RP
3
3
3
Marking
Features
None
(ns)
-40B
-26A
t
-335
-262
-265
55
60
60
65
65
RC
G
Y
I

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mt4vddt1664hg-335 Summary of contents

Page 1

DDR SDRAM SODIMM MT4VDDT864H – 64MB MT4VDDT1664H – 128MB MT4VDDT3264H – 256MB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • ...

Page 2

... Density MT4VDDT864HG-335__ MT4VDDT864HY-335__ MT4VDDT864HG-265__ MT4VDDT864HY-265__ Table 4: Part Numbers and Timing Parameters Base device: MT46V16M16, Module 2 Part Number Density 128MB MT4VDDT1664HG-40B__ MT4VDDT1664HY-40B__ 128MB MT4VDDT1664HG-335__ 128MB MT4VDDT1664HY-335__ 128MB 128MB MT4VDDT1664HG-262__ MT4VDDT1664HY-262__ 128MB MT4VDDT1664HG-26A__ 128MB MT4VDDT1664HY-26A__ 128MB 128MB MT4VDDT1664HG-265__ 128MB MT4VDDT1664HY-265__ PDF: 09005aef8086ea3d/Source: 09005aef8086ea0b DD4C8_16_32x64H ...

Page 3

Table 5: Part Numbers and Timing Parameters Base device: MT46V32M16, Module 2 Part Number Density 256MB MT4VDDT3264HG-40B__ 256MB MT4VDDT3264HY-40B__ MT4VDDT3264HG-335__ 256MB MT4VDDT3264HY-335__ 256MB MT4VDDT3264HG-262__ 256MB 256MB MT4VDDT3264HY-262__ MT4VDDT3264HG-26A__ 256MB MT4VDDT3264HY-26A__ 256MB MT4VDDT3264HG-265__ 256MB 256MB MT4VDDT3264HY-265__ Notes: 1. Data sheets for ...

Page 4

Table 7: Pin Descriptions Symbol WE#, CAS#, RAS# CK0, CK0#, CK1, CK1# CKE0 S0# BA0, BA1 A0–A11 (64MB) A0–A12 (128MB, 256MB) DM0–DM7 SCL SA0–SA2 DQS0–DQS7 DQ0–DQ63 SDA V REF DDSPD DNU NC PDF: 09005aef8086ea3d/Source: 09005aef8086ea0b ...

Page 5

Figure 2: Functional Block Diagram S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DQ24 DQ25 ...

Page 6

General Description The MT4VDDT864H, MT4VDDT1664H, and MT4VDDT1664H are high-speed CMOS, dynamic random-access, 64MB, 128MB, and 256MB memory modules organized in a x64 configuration. DDR SDRAM modules use internally configured 4-bank DDR SDRAM devices. DDR SDRAM modules use a double data ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each ...

Page 8

I Specifications DD Table 10: I Specifications and Conditions – 64MB DD MT46V8M16 Values shown for 128Mb (8 Meg x 16) component data sheet Parameter/Condition Operating current: One device bank; Active-precharge (MIN); CK ...

Page 9

Table 11: I Specifications and Conditions – 128MB DD MT46V16M16 Values shown for 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating current: One device bank; Active-precharge (MIN (MIN); ...

Page 10

Table 12: I Specifications and Conditions – 256MB DD MT46V32M16 Values shown for 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating current: One device bank; Active-precharge (MIN (MIN); ...

Page 11

Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 12

Table 15: Serial Presence-Detect Matrix, -40B Speed Grade Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes In SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of ...

Page 13

Table 15: Serial Presence-Detect Matrix, -40B Speed Grade (continued) Byte Description 46–61 Reserved 47 DIMM height 48–61 Reserved 62 SPD revision 63 Checksum for bytes 0–62 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 ...

Page 14

Table 16: Serial Presence-Detect Matrix, -265, -26A, -262, and -335 Speed Grades Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes In SPD device 2 Fundamental memory type 3 Number of row addresses on ...

Page 15

Table 16: Serial Presence-Detect Matrix, -265, -26A, -262, and -335 Speed Grades (continued) Byte Description 34 Data/data mask input setup time, 35 Data/data mask input hold time, 36–40 Reserved 41 MIN active-to-active/refresh time, 42 MIN auto refresh to active/auto refresh ...

Page 16

Module Dimensions Figure 3: 200-Pin SODIMM 2.00 (0.078) R (2X) U1 1.80 (0.071) (2X) 6.00 (0.236) 2.44 (0.096) 2.00 (0.079) PIN 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram ...

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