mt4vddt1664hg-335 Micron Semiconductor Products, mt4vddt1664hg-335 Datasheet - Page 10

• Manufacturer Part Number: mt4vddt1664hg-335
• Description: 64mb, 128mb, 256mb X64, Sr 200-pin Ddr Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

Table 12:
PDF: 09005aef8086ea3d/Source: 09005aef8086ea0b
DD4C8_16_32x64H.fm - Rev. D 4/07 EN
Parameter/Condition
Operating current: One device bank; Active-precharge;
t
changing once per clock cycle; Address and control inputs
changing once every two clock cycles
Operating current: One device bank; Active-read precharge;
Burst = 4;
Address and control inputs changing once per clock cycle
Precharge power-down standby current: All device banks
idle; Power-down mode;
Idle standby current: CS# = HIGH; All device banks idle;
t
inputs changing once per clock cycle; V
and DM
Active power-down standby current: One device bank
active; Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One
device bank; Active-precharge;
t
clock cycle; Address and other control inputs changing once
per clock cycle
Operating current: Burst = 2; Reads; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle;
Operating current: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle;
changing twice per clock cycle
Auto refresh current:
Self refresh current: CKE ≤ 0.2V
Operating current: Four device bank interleaving reads;
(BL = 4) with auto precharge;
Address and control inputs change only during active READ or
WRITE commands
RC =
CK =
CK =
t
t
t
RC (MIN);
CK (MIN); CKE = HIGH; Address and other control
CK (MIN); DQ, DM, and DQS inputs changing twice per
t
RC =
I
Values shown for
512Mb (32 Meg x 16) component data sheet
DD
t
t
t
CK =
CK =
t
RC (MIN);
CK =
Specifications and Conditions – 256MB
t
t
CK (MIN); I
CK (MIN); DQ, DM, and DQS inputs
t
CK (MIN); DQ, DM, and DQS inputs
t
CK =
t
CK =
t
CK =
t
RC =
t
t
MT46V32M16
CK (MIN); CKE = (LOW)
RC =
t
OUT
CK (MIN); I
t
CK (MIN); CKE = LOW
t
RC (MIN);
t
= 0mA
64MB, 128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM
RAS (MAX);
IN
= V
REF
OUT
t
(MIN)
t
REFC =
REFC = 7.8125µs
t
CK =
for DQ, DQS,
DDR SDRAM only and are computed from values specified in the
= 0mA;
t
t
CK (MIN);
RFC
10
Symbol
I
I
I
I
I
I
I
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
DD
4W
3N
5A
2P
3P
4R
2F
0
1
5
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1,380
1,920
-40B
620
780
220
180
240
840
860
20
44
24
1,160
1,620
-335
520
640
180
140
200
660
780
20
40
20
©2004 Micron Technology, Inc. All rights reserved.
1,160
1,600
-262
520
640
180
140
200
660
640
20
40
20
I
DD
Specifications
-26A/
1,120
1,400
-265
460
580
160
120
180
580
540
20
40
20
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA