ap03n70i-a APEC, ap03n70i-a Datasheet - Page 4

• Manufacturer Part Number: ap03n70i-a
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP03N70I-A
100
10
16
14
12
10
8
6
4
2
0
1
0
0
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
GS
Single Pulse
DS
V
2
T
I
DS
D
c
Q
=480V
=25
=3A
V
G
DS
10
4
t
, Total Gate Charge (nC)
d(on)
o
C
, Drain-to-Source Voltage (V)
6
t
r
100
8
10
t
d(off)
1000
12
10us
100us
1ms
10ms
100ms
t
f
14
10000
16
Fig 10. Effective Transient Thermal Impedance
10000
100
0.01
0.1
1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
Duty factor=0.5
G
5
0.02
0.01
0.0001
Single Pulse
0.05
0.2
0.1
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
13
Q
G
Charge
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
T
x R
1
25
thjc
C
C
+ T
C
Q
C
iss
rss
oss
10
29
4/4