ne5520379a-t1a Renesas Electronics Corporation., ne5520379a-t1a Datasheet
ne5520379a-t1a
Available stocks
Related parts for ne5520379a-t1a
ne5520379a-t1a Summary of contents
Page 1
... Part Number Package NE5520379A-T1 79A NE5520379A-T1A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5520379A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
Page 2
... C) A Ratings Unit 15.0 V 5.0 V 1 tot °C 125 ch −65 to +125 °C Test Conditions DS GS Duty Cycle ≤ 50%, T ≤ 1.8 GHz 3 Data Sheet PU10122EJ03V0DS NE5520379A MIN. TYP. MAX. Unit 2.8 3.2 6 2.5 3.5 V − 1.75 2 dBm ...
Page 3
... GS add 785 MHz dBm 3 2.5 V, Note 785 MHz dBm, out 3 2.5 V, Note add Data Sheet PU10122EJ03V0DS NE5520379A MIN. TYP. MAX. Unit − − 100 nA − − 100 nA 1.0 1.35 2.0 V − − 2.5 S − − ...
Page 4
... DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 100 2 500 915 MHz dBm in 2 000 1 500 50 1 000 500 0 4.0 0 1.0 (V) Gate to Source Voltage V Data Sheet PU10122EJ03V0DS NE5520379A 2.0 2.5 3.0 (V) GS η d η add Input Power P (dBm) in η d η add 2.0 3 ...
Page 5
... DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 2 500 100 785 MHz dBm in 2 000 1 500 50 1 000 500 0 4.0 0 1.0 Gate to Source Voltage V Data Sheet PU10122EJ03V0DS NE5520379A η d η add (dBm) in η d η add (dBm) in η ...
Page 6
... DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER 100 2 500 150 mA Dset f = 460 MHz 2 000 1 500 50 1 000 500 Data Sheet PU10122EJ03V0DS NE5520379A η d η add Input Power P (dBm) in η d η add Input Power P (dBm) ...
Page 7
... Microwave] → [Device Parameters] URL http://www.csd-nec.com/ LARGE SIGNAL IMPEDANCE ( (MHz) Z (Ω 785 TBD Note Z is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency 3 600 mA dBm) Dset in Note (Ω) OL TBD Data Sheet PU10122EJ03V0DS NE5520379A 7 ...
Page 8
... MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 8 (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10122EJ03V0DS NE5520379A Drain 0.8 MAX. ...
Page 9
... Data Sheet PU10122EJ03V0DS NE5520379A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 9 ...
Page 10
... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 10 Please check with an NEC sales representative for Data Sheet PU10122EJ03V0DS NE5520379A The M8E 00 0110 ...
Page 11
... Taipei Branch Office TEL: +886-2-8712-0478 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.csd-nec.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE5520379A 0306 ...