ne5520379a-t1a Renesas Electronics Corporation., ne5520379a-t1a Datasheet - Page 2

• Manufacturer Part Number: ne5520379a-t1a
• Description: 3.2 V Operation Silicon Rf Power Ldmos Fet For Gsm/dcs Dual-band Phone Transmission Amplifiers
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
2
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current (Pulse Test)
Input Power
Note Duty Cycle ≤ 50%, T
Parameter
Parameter
on
≤ 1 s
Symbol
Symbol
I
V
V
P
T
D
T
I
V
V
P
DS
GS
D
Note
stg
tot
ch
I
GS
DS
D
in
A
= +25° ° ° ° C)
Duty Cycle ≤ 50%, T
f = 1.8 GHz, V
Data Sheet PU10122EJ03V0DS
−65 to +125
Ratings
Test Conditions
15.0
125
5.0
1.5
3.0
20
DS
= 3.6 V
on
≤ 1 s
Unit
°C
°C
W
V
V
A
A
MIN.
2.8
24
0
−
TYP.
1.75
3.2
2.5
25
NE5520379A
MAX.
6.0
3.5
2.0
26
dBm
Unit
V
V
A