hi3055 Hi-Sincerity Microelectronics Corp., hi3055 Datasheet

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hi3055

Manufacturer Part Number
hi3055
Description
Npn Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HI3055
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3055 is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
Characteristics
HI3055
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature .................................................................................................... +150 C
Maximum Power Dissipation
Total Power Dissipation (Tc=25 C) ..................................................................................... 20W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current .................................................................................................................... 6 A
*VCE(sat)1
*VCE(sat)2
*VBE(on)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
ICBO
ICEO
IEBO
ICEX
fT
Min.
70
60
20
5
5
2
(Ta=25 C)
-
-
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
(Ta=25 C)
Max.
100
0.5
1.1
1.8
20
20
50
8
-
-
-
-
-
MHz
Unit
mA
uA
uA
uA
V
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=200mA, IE=0
IC=10mA, IB=0
IE=10mA, IC=0
VCB=70V, IE=0
VCE=70V, VEB(off)=1.5V
VCE=30V, IB=0
VEB=5V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
VCE=4V, IC=4A
VCE=4V, IC=4A
VCE=4V, IC=10A
VCE=10V, IC=500mA, f=1MHz
Test Conditions
Spec. No. : HE9004
Issued Date : 1994.01.25
Revised Date : 2001.05.31
Page No. : 1/2
HSMC Product Specification

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hi3055 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HI3055 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3055 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................................... +150 C Maximum Power Dissipation Total Power Dissipation (Tc=25 C) ..................................................................................... 20W Maximum Voltages and Currents BVCBO Collector to Base Voltage ...

Page 2

... Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HI3055 ...

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