cy62158e Cypress Semiconductor Corporation., cy62158e Datasheet - Page 4

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cy62158e

Manufacturer Part Number
cy62158e
Description
8-mbit 1m X 8 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Data Retention Characteristics
Over the Operating Range
Notes
Document #: 38-05684 Rev. *D
R1
R2
R
V
V
I
t
t
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V
CCDR
CDR
R
Parameter
TH
DR
TH
[8]
[7]
[6]
V
CE
CE
or
OUTPUT
CC
2
1
INCLUDING
V
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
CC
Parameters
JIG AND
SCOPE
100 pF
for Data Retention
Description
R1
CC
ramp from V
R2
V
t
CC
CDR
V
CE
V
Equivalent to: THÉVENIN EQUIVALENT
CC
IN
(min)
Figure 2. AC Test Loads and Waveforms
1838
994
645
1.75
1
> V
DR
= V
> V
Figure 3. Data Retention Waveform
to V
CC
DR
CC
CC
OUTPUT
− 0.2V or V
− 0.2V, CE
(min) > 100 μs or stable at V
Rise Time = 1 V/ns
DATA RETENTION MODE
Conditions
IN
5.0V
2
GND
< 0.2V,
V
3V
< 0.2V
DR
> 2.0 V
R
10%
TH
CC
(min) > 100 μs.
ALL INPUT PULSES
V
90%
Ω
Ω
Ω
V
V
CC
t
R
Min
t
(min)
RC
2
0
90%
CY62158E MoBL
10%
Fall Time = 1 V/ns
Typ
Unit
[2]
Max
8
Page 4 of 10
Unit
μA
ns
ns
V
®
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