pssi45d-06 Power Semiconductors, Inc., pssi45d-06 Datasheet
pssi45d-06
Manufacturer Part Number
pssi45d-06
Description
Igbt Module
Manufacturer
Power Semiconductors, Inc.
Datasheet
1.PSSI45D-06.pdf
(2 pages)
IGBTs
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
Preliminary Data Sheet
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
on
off
IGBT Module
tot
CE(sat)
GE(th)
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
CES
GES
CEK
ies
thJC
thJH
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 75 A; V
= 1 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 0 V; V
= 25 V; V
= ±15 V; R
CE
GE
CES
CES
= 300 V; I
= 15/0 V; R
;
; V
PSSI 45D/06
GE
GE
GE
GE
GE
= 15 V; T
= ± 20 V
= V
G
= ±15 V; R
V
= 0 V; f = 1 MHz
= 22 ; T
GE
C
CE
= 40 A
FH 13
G
= 0 V;
VJ
= 22
A 1
T
= 125°C
VJ
VJ
= 25°C
G
VJ
= 125°C
T
T
= 22 ; T
= 125°C
VJ
VJ
(T
= 25°C
VJ
= 125°C
= 25°C, unless otherwise specified)
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
RT 16
EG 1
VJ
PSSI 45D/06
PSSI 46D/06
IK 10
VX 18
= 125°C
min.
4.5
Characteristic Values
Maximum Ratings
300
2.3
2.8
1.8
1.4
2.8
1.2
typ.
50
55
30
± 20
V
600
208
100
69
48
CES
10
max.
100
2.8
6.5
0.8 mA
4.4 mA
0.6 K/W
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
K/W
mJ
mJ
µs
nA
n s
n s
n s
n s
nF
W
V
V
A
A
A
V
V
V
I
V
V
PSSI 46D/06
Features
Advantages
C80
CES
CE(sat)typ.
Package with DCB ceramic
base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
RT 16
ECO-PAC
A 1
= 48 A
= 600 V
= 2.3 V
LN 9
FH 13
TM
IK 10
VX 18
2
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pssi45d-06 Summary of contents
Page 1
IGBT Module Preliminary Data Sheet PSSI 45D/06 IGBTs Symbol Conditions 25°C to 150°C CES VJ V GES 25°C C25 80°C C80 ±15 ...
Page 2
Reverse diodes (FRED) Symbol Conditions 25°C F25 80°C F80 C Symbol Conditions 25° 125° ...