ap16n50i APEC, ap16n50i Datasheet - Page 4

• Manufacturer Part Number: ap16n50i
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP16N50I
1000
100
10
1
0
0
12
10
8
6
4
2
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
10%
90%
V
V
GS
DS
Single Pulse
T
V
C
DS
=25
1
10
t
,Drain-to-Source Voltage (V)
Q
V
d(on)
o
G
DS
I
C
D
, Total Gate Charge (nC)
=400V
=16A
t
r
10
20
t
d(off)
100
30
t
f
100ms
100us
10ms
1ms
DC
1s
1000
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
10
0.1
1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
Duty factor = 0.5
Single Pulse
0.02
0.01
0.05
0.2
0.1
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
thjc
25
+ T
Q
C
C
C
C
iss
oss
rss
10
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