hn7g01fe TOSHIBA Semiconductor CORPORATION, hn7g01fe Datasheet
hn7g01fe
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hn7g01fe Summary of contents
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... Symbol Rating Unit P (Note 1) 100 mW T 125 °C j −55~125 T °C stg Pin Assignment HN7G01FE Unit EMITTER 2. BASE 3. DRAIN 4. SOURCE 5. GATE 6. COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-2N1F Weight: 0.003 g (typ.) (top view 2005-03-23 ...
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... IN D.U. < < Ω out Common source ( 25°C OUT HN7G01FE Min Typ. Max Unit ⎯ ⎯ − 0.1 µ A ⎯ ⎯ − 0.1 µ A ⎯ 300 1000 ⎯ − 15 − ⎯ − 110 − 250 ⎯ ...
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... Q1 (Transistor) 3 HN7G01FE 2005-03-23 ...
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... Q2 (S-MOS) 4 HN7G01FE 2005-03-23 ...
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... Q2 (S-MOS) 5 HN7G01FE 2005-03-23 ...
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... Q1, Q2 Common * P – Ta 200 150 100 100 125 AMBIENT TEMPERATURE Ta (°C) *:Total rating 150 175 6 HN7G01FE 2005-03-23 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 HN7G01FE 030619EAA 2005-03-23 ...