hn7g01fe TOSHIBA Semiconductor CORPORATION, hn7g01fe Datasheet - Page 2
hn7g01fe
Manufacturer Part Number
hn7g01fe
Description
Toshiba Multichip Discrete Device
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN7G01FE.pdf
(7 pages)
Q1
Q2
Switching Time Test Circuit
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Note 2: h
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Switching time test circuit
(Transistor)
(MOSFET)
2.5 V
0
10 µ S
V
FE
Characteristic
Characteristic
IN
classification A: 300~600, B: 500~1000
Electrical Characteristics
IN
Electrical Characteristics
Turn-on time
Turn-off time
I
D
V
DD
OUT
V
V
h
V
R
CE (sat) (1)
CE (sat) (2)
V
FE
Symbol
Symbol
(BR) DSS
DS (ON)
BE (sat)
⎪ Y
I
I
I
I
C
C
C
CBO
EBO
GSS
DSS
V
t
t
(Note 2) V
oss
on
off
rss
V
D.U. < = 1%
V
(Z
Common source
Ta = 25°C
iss
th
fs
DD
IN
⎪
out
: t
= 3 V
r
= 50 Ω )
, t
f
V
V
I
I
I
V
I
V
V
V
I
V
V
V
V
V
< 5 ns
C
C
C
D
D
CB
EB
CE
GS
DS
DS
DS
DS
DS
DS
DD
DD
= − 10 mA, I
= − 200 mA, I
= − 200 mA, I
= 100 µ A, V
= 10 mA, V
(Ta = 25°C)
= − 5 V, I
= − 15 V, I
= − 2 V, I
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, I
= 3 V, I
(Ta = 25°C)
2
D
D
D
D
Test Condition
Test Condition
GS
GS
GS
C
C
(b) V
(c) V
GS
= 0.1 mA
= 10 mA
B
DS
GS
= 10 mA, V
= 10 mA, V
E
GS
= 0
= − 10 mA
B
B
= − 0.5 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= − 10 mA
= − 10 mA
= 2.5 V
V
V
= 0
= 0
= 0
OUT
IN
GS
DS
GS
GS
= 0~2.5 V
= 0~2.5 V
V
DS (ON)
2.5 V
V
DD
0
Min
Min
300
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
t
90%
r
− 0.87
− 110
Typ.
Typ.
11.0
0.16
0.19
− 15
3.3
9.3
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
t
90%
HN7G01FE
off
2005-03-23
1000
− 250
Max
− 0.1
− 0.1
− 1.2
Max
− 30
1.3
12
t
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
f
10%
Unit
Unit
mV
mS
µ A
µ A
µ A
µ A
pF
pF
pF
µ s
V
V
V
Ω