si7862dp-t1 Vishay, si7862dp-t1 Datasheet
si7862dp-t1
Related parts for si7862dp-t1
si7862dp-t1 Summary of contents
Page 1
... PowerPAKr SO Bottom View Ordering Information: Si7862DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
Page 2
... Si7862DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
Page 3
... V - Source-to-Drain Voltage (V) SD Document Number: 71792 S-31727—Rev. B. 18-Aug 25_C J 0.8 1.0 1.2 Si7862DP Vishay Siliconix Capacitance 10000 8000 C iss 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...
Page 4
... Si7862DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 -0.0 -0.2 -0.4 -0.6 -0.8 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse ...
Page 5
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...