si7862dp-t1 Vishay, si7862dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7862dp-t1
• Description: N-channel 16-v D-s Mosfet
• Manufacturer: Vishay

Si7862DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
V
GS
1
V
a
a
DS
= 5 thru 2.5 V
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
2 V
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5
V
V
I
DS
D
DS
^ 1 A, V
I
= 12.8 V, V
F
= 6 V, V
V
V
V
V
V
V
= 2.9 A, di/dt = 100 A/ms
DS
DS
I
DS
V
Test Condition
DS
GS
S
V
V
GS
DS
DD
DD
= 4.5 A, V
= 12.8 V, V
w 5 V, V
= V
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 6 V, I
= 6 V, R
= 6 V, R
GEN
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
D
GS
= 0 V, T
D
GS
GS
D
= 250 mA
L
L
D
= 29 A
GS
= "8 V
= 23 A
= 6 W
= 6 W
= 4.5 V
= 29 A
= 0 V
= 0 V
D
J
G
= 29 A
60
50
40
30
20
10
= 55_C
= 6 W
0
0.0
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
0.6
0.5
30
1.0
0.0027
0.0045
25_C
Typ
0.75
11.8
140
120
8.9
1.3
S-31727—Rev. B. 18-Aug-03
48
42
38
50
80
T
C
Document Number: 71792
= 125_C
1.5
0.0033
0.0055
"100
Max
180
120
1.2
2.1
70
60
60
75
1
5
2.0
-55_C
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
2.5