si7858bdp Vishay, si7858bdp Datasheet

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si7858bdp

Manufacturer Part Number
si7858bdp
Description
N-channel 12 V D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7858bdp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7858bdp-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 66589
S10-1045-Rev. A, 03-May-10
Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
12
(V)
8
6.15 mm
D
7
0.0025 at V
0.0030 at V
0.0037 at V
D
6
R
D
PowerPAK
DS(on)
5
Bottom View
D
GS
GS
GS
(Ω)
J
= 4.5 V
= 2.5 V
= 1.8 V
= 150 °C)
b, f
1
®
S
SO-8
2
N-Channel 12 V (D-S) MOSFET
S
3
S
I
5.15 mm
D
40
40
40
4
(A)
G
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
56 nC
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Low Output Voltage, High Current Synchronous
Symbol
Symbol
T
R
R
Definition
Rectifiers
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
2.1
20
- 55 to 150
4.5
5.0
3.2
Limit
33
26
260
40
40
40
± 8
12
70
20
20
48
31
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
G
2.6
25
Vishay Siliconix
N-Channel MOSFET
Si7858BDP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si7858bdp Summary of contents

Page 1

... Bottom View Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7858BDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 66589 S10-1045-Rev. A, 03-May- 1.5 2.0 2.5 8000 6400 4800 3200 1600 1.5 1.3 1 0.9 0 100 Si7858BDP Vishay Siliconix ° 125 ° ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si7858BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° °C J 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.015 0.012 0.009 0.006 0.003 0.000 0.8 1.0 1.2 250 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7858BDP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7858BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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