si7858bdp Vishay, si7858bdp Datasheet - Page 4

• Manufacturer Part Number: si7858bdp
• Description: N-channel 12 V D-s Mosfet
• Manufacturer: Vishay

Si7858BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
0.01
100
0.1
0.4
0.2
10
0
1
- 50
0.0
- 25
T
Source-Drain Diode Forward Voltage
J
0.2
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
T
J
= 25 °C
I
D
= 250 μA
75
0.8
0.01
100
Limited by R
0.1
10
100
0.01
I
1
D
= 5 mA
1.0
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
T
A
GS
= 25 °C
DS(on)
> minimum V
1.2
V
150
DS
0.1
*
- Drain-to-Source Voltage (V)
GS
BVDSS Limited
at which R
1
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
250
200
150
100
50
0
0
10
0 .
0
is specified
0
1
1 ms
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
V
0.01
100
GS
- Gate-to-Source Voltage (V)
2
Time (s)
0.1
S10-1045-Rev. A, 03-May-10
Document Number: 66589
3
I
D
T
T
1
= 15 A
J
J
= 125 °C
= 25 °C
4
1
5
0