si7848dp-t1 Vishay, si7848dp-t1 Datasheet
si7848dp-t1
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si7848dp-t1 Summary of contents
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... Bottom View Ordering Information: Si7848DP-T1 Si7848DP-T1—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si7848DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Source-Drain Diode Forward Voltage Document Number: 71450 S-52554-Rev. D, 19-Dec-05 3000 2500 2000 1500 1000 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si7848DP Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.6 1.2 0.8 0.4 0 ...
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... Si7848DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.6 0.4 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...