si7848dp-t1 Vishay, si7848dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7848dp-t1
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71450
S-52554-Rev. D, 19-Dec-05
0.020
0.016
0.012
0.008
0.004
0.000
50
10
10
1
8
6
4
2
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 14 A
0.2
On-Resistance vs. Drain Current
= 20 V
10
V
7
SD
Q
g
T
- Source-to-Drain Voltage (V)
0.4
J
I
D
- Total Gate Charge (nC)
= 150 °C
Gate Charge
- Drain Current (A)
20
14
0.6
30
21
0.8
T
V
V
J
GS
GS
= 25 °C
40
28
1.0
= 4.5 V
= 10 V
1.2
50
35
3000
2500
2000
1500
1000
0.04
0.03
0.02
0.01
0.00
2.0
1.6
1.2
0.8
0.4
0.0
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 14 A
= 10 V
C
2
8
rss
T
V
0
V
J
DS
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
16
4
I
D
= 14 A
50
C
Vishay Siliconix
C
oss
iss
24
75
6
Si7848DP
100
www.vishay.com
32
8
125
150
40
10
3