si7844dp-t1 Vishay, si7844dp-t1 Datasheet

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si7844dp-t1

Manufacturer Part Number
si7844dp-t1
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI7844DP-T1
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Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71328
S-52554-Rev. C, 30-Mar-06
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
30
Ordering Information:
(V)
8
D1
6.15 mm
7
D1
0.030 at V
0.022 at V
6
D2
PowerPAK
Bottom View
r
DS(on)
5
Si7844DP-T1
Si7844DP-T1-E3 (Lead (Pb)-free)
D2
J
a
= 150 °C)
GS
GS
a
Dual N-Channel 30-V (D-S) MOSFET
(Ω)
= 4.5 V
= 10 V
1
®
S1
SO-8
2
a
G1
3
S2
5.15 mm
a
4
b,c
G2
A
I
D
8.5
= 25 °C, unless otherwise noted
10
Steady State
Steady State
(A)
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
• 100 % R
G
Symbol
Symbol
T
1
R
R
J
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
N-Channel MOSFET
stg
g
D
S
Tested
1
1
®
Power MOSFET
10 secs
Typical
8.0
2.9
3.5
2.2
3.9
10
26
60
- 55 to 150
± 20
260
30
20
Steady State
Maximum
G
2
6.4
5.1
1.1
1.4
0.9
5.5
35
85
Vishay Siliconix
N-Channel MOSFET
Si7844DP
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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si7844dp-t1 Summary of contents

Page 1

... Bottom View Ordering Information: Si7844DP-T1 Si7844DP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7844DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71328 S-52554-Rev. C, 30-Mar-06 1000 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si7844DP Vishay Siliconix 800 C iss 600 400 C oss C 200 rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si7844DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.4 0 0.0 - 0.2 - 0.4 - 0 Temperature J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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