si7844dp-t1 Vishay, si7844dp-t1 Datasheet - Page 4

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si7844dp-t1

Manufacturer Part Number
si7844dp-t1
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Si7844DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71328.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
-
0.01
0.1
0.1
50
2
1
2
1
10
10
-
- 4
Single Pulse
25
- 5
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
- Temperature
25
10
- 3
50
I
D
10
= 250 μA
Normalized Thermal Transient Impedance, Junction-to-Ambient
- 4
75
(°C)
Normalized Thermal Transient Impedance, Junction-to-Case
100
10
- 2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
- 3
10
- 1
100
80
60
40
20
0
1
0.001
10
- 2
0.01
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
- T
10
t
0.1
1
A
- 1
S-52554-Rev. C, 30-Mar-06
= P
Document Number: 71328
t
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 60 °C/W
1
600
1
10

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