zxmc3am832tc Zetex Semiconductors plc., zxmc3am832tc Datasheet

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zxmc3am832tc

Manufacturer Part Number
zxmc3am832tc
Description
Mpps?? Miniature Package Power Solutions Complementary 30v Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
C01
PROVISIONAL ISSUE E - JULY 2004
DEVICE
ZXMC3AM832TA
ZXMC3AM832TC
Low on - resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
MOSFET gate drive
LCD backlight inverters
Motor control
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
(BR)DSS
(BR)DSS
= -30V; R
= 30V; R
REEL
13’‘
7
’‘
WIDTH
TAPE
8mm
8mm
DS(ON)
DS(ON)
= 0.12 ; I
= 0.21 ; I
10000 units
QUANTITY
3000 units
PER REEL
D
D
= 3.7A
= -2.7A
1
PINOUT
ZXMC3AM832
G2
D2
3mm x 2mm Dual Die MLP
underside view
4
5
3 x 2 Dual MLP
D2
S2
6
3
D1
7
2
G1
D1
8
1
S1

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zxmc3am832tc Summary of contents

Page 1

... MOSFET gate drive • LCD backlight inverters • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC3AM832TA 7 8mm ’‘ ZXMC3AM832TC 13’‘ 8mm DEVICE MARKING C01 PROVISIONAL ISSUE E - JULY 2004 = -2.7A D QUANTITY PER REEL 3000 units 10000 units ...

Page 2

ZXMC3AM832 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(f) Power Dissipation at ...

Page 3

R DS(ON) 10 Limited 100ms 100m 10ms 1ms Note (a)(f) 10m Single Pulse, T =25°C amb 1 V Drain-Source Voltage (V) DS N-channel Safe Operating Area Note (a)( D=0.5 40 D=0.2 20 D=0.05 D=0.1 0 ...

Page 4

ZXMC3AM832 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On ...

Page 6

ZXMC3AM832 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 10V 150° 25°C 0.1 2.0 2.5 3.0 3.5 V Gate-Source ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS 300 250 200 C ISS 150 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage PROVISIONAL ISSUE E - JULY 2004 2.5A GS ...

Page 8

ZXMC3AM832 P-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics T = 150° 25°C 0 Gate-Source Voltage (V) GS Typical Transfer ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS 300 250 200 C ISS 150 C OSS 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage PROVISIONAL ISSUE E - JULY 2004 ...

Page 10

ZXMC3AM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES PACKAGE DIMENSIONS Millimeters DIM Min Max Min A 0.80 1.00 0.0315 A1 0.00 0.05 0.00 A2 0.65 0.75 0.0256 A3 0.15 ...

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