zxmc3am832tc Zetex Semiconductors plc., zxmc3am832tc Datasheet - Page 5

• Manufacturer Part Number: zxmc3am832tc
• Description: Mpps?? Miniature Package Power Solutions Complementary 30v Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE E - JULY 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
I
R
g
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
V
I
V
C
amb
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
5
MIN.
-0.8
-30
-0.85
TYP.
2.48
39.8
25.8
11.3
2.58
5.15
0.65
0.92
18.6
14.8
204
1.5
2.8
7.5
MAX.
0.210
0.330
-0.95
100
1
UNIT CONDITIONS
ZXMC3AM832
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250µA, V
=-250 A, V
=-1.4A
=-1.4A
GS
=25°C, I
=25°C, I
=6.0Ω, V
=-30V, V
=-15V,I
=-15 V, V
=-15V,V
=-15V,V
=-10V, I
=-4.5V, I
=0V
= 20V, V
=-15V, I
S
F
D
=-0.95A,
GS
=-1.1A,
D
GS
GS
=-1.4A
D
GS
D
=-1.4A
GS
GS
DS
=-1A
=-1.1A
=-10V
DS
=-5V,
=-10V,
=0V
=0V
=0V,
= V
=0V
GS