si7943dp-t1-e3 Vishay, si7943dp-t1-e3 Datasheet - Page 4

• Manufacturer Part Number: si7943dp-t1-e3
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7943DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71629.
www.vishay.com
4
– 0.1
– 0.3
– 0.5
0.3
0.1
– 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
– 25
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
– Temperature (°C)
25
10
–3
Single Pulse
50
Single Pulse
10
I
D
–3
= 250 μA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Case
100
10
–2
125
New Product
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
–2
10
–1
10
100
1
80
60
40
20
–1
0
0.001
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
– T
1
t
A
1
S-52555-Rev. C, 19-Dec-05
= P
0.1
t
Document Number: 71629
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 60 °C/W
1
1 0
600
10