si7997dp Vishay, si7997dp Datasheet

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si7997dp

Manufacturer Part Number
si7997dp
Description
Dual P-channel 30 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7997dp-T1-GE3
Manufacturer:
ON
Quantity:
1 000
Part Number:
si7997dp-T1-GE3
0
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 85 °C/W.
Document Number: 66719
S10-1826-Rev. A, 09-Aug-10
Ordering Information:
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 30
(V)
8
D1
6.15 mm
7
D1
0.0078 at V
0.0055 at V
6
D2
PowerPAK
Bottom View
5
R
D2
DS(on)
Si7997DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
1
J
()
®
S1
= - 4.5 V
= - 10 V
= 150 °C)
b, f
Dual P-Channel 30 V (D-S) MOSFET
SO-8
2
G1
3
S2
5.15 mm
4
I
G2
D
- 60
- 60
(A)
Steady State
a
d, e
t  10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted)
g
51 nC
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Definition
Battery and Load Switching
for Notebook PCs
Typical
2.2
26
g
Tested
®
Power MOSFET
- 55 to 150
- 20.8
- 16.6
- 2.9
3.5
2.2
Limit
- 100
- 60
- 60
± 20
- 30
- 38
- 30
260
45
46
29
G
b, c
b, c
b, c
1
P-Channel MOSFET
a
a
b, c
b, c
Maximum
2.7
35
Vishay Siliconix
S
D
1
1
Si7997DP
G
2
P-Channel MOSFET
www.vishay.com
S
D
°C/W
Unit
Unit
2
2
mJ
°C
W
V
A
1

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si7997dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7997DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7997DP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 66719 S10-1826-Rev. A, 09-Aug-10 New Product 8000 6000 4000 2000 60 80 100 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 80 100 120 Si7997DP Vishay Siliconix ° 125 ° ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si7997DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.0 1 250 μA D 1.6 1.4 1.2 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.020 0.015 0.010 °C J 0.005 0 0.8 1.0 1.2 50 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66719 S10-1826-Rev. A, 09-Aug-10 New Product 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7997DP Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power, Junction-to-Case www.vishay.com 5 ...

Page 6

... Si7997DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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