si7997dp Vishay, si7997dp Datasheet - Page 4

• Manufacturer Part Number: si7997dp
• Description: Dual P-channel 30 V D-s Mosfet
• Manufacturer: Vishay

Si7997DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.1
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
= 150 °C
I
T
D
J
25
= 250 μA
- Temperature (°C)
0.6
50
75
0.8
0.01
100
T
0.1
10
J
1
0.01
= 25 °C
100
Limited by R
Single Pulse
* V
T
1.0
A
GS
125
= 25 °C
> minimum V
V
0.1
New Product
DS
1.2
150
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.020
0.015
0.010
0.005
10
is specified
50
40
30
20
10
0
0
0.01
0
I
D
On-Resistance vs. Gate-to-Source Voltage
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
= 20 A
100
0.1
2
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
Time (s)
T
J
S10-1826-Rev. A, 09-Aug-10
= 125 °C
T
Document Number: 66719
J
10
= 25 °C
6
100
8
1000
10