ssm6n16fe TOSHIBA Semiconductor CORPORATION, ssm6n16fe Datasheet - Page 2

• Manufacturer Part Number: ssm6n16fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
product. For normal switching operation, V
voltage than V
V
Please take this into consideration for using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test circuit
th
can be expressed as voltage between gate and source when low operating current value is I
2.5 V
Characteristics
th
0
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
. (Relationship can be established as follows: V
DD
IN
out
10 μs
: t
Turn-on time
Turn-off time
= 3 V
r
= 50 Ω)
, t
f
< 5 ns
IN
(Ta = 25°C) (Q1, Q2 Common)
V
R
Symbol
(BR) DSS
DS (ON)
⏐Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
R
V
rss
iss
GS (on)
th
fs
OUT
DD
L
⏐
requires higher voltage than V
V
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 10 mA, V
= 10 mA, V
= 1 mA, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= ±10 V, V
= 3 V, I
= 0~2.5 V
(b) V
(c) V
2
D
D
D
Test Condition
GS
OUT
IN
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
GS
= 10 mA,
GS
GS (off)
DS
= 1.5 V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 4 V
= 2.5 V
= 0
= 0
= 0
V
< V
DS (ON)
V
2.5 V
DD
0 V
th
< V
GS (on)
th
and V
t
on
10%
)
Min
0.6
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
GS (off)
t
r
10%
90%
Typ.
125
1.5
2.2
5.2
9.3
4.5
9.8
70
⎯
⎯
⎯
⎯
⎯
SSM6N16FE
D
requires lower
t
90%
off
= 100 μA for this
2007-11-01
Max
1.1
3.0
4.0
±1
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
t
f
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V