ssm6n16fe TOSHIBA Semiconductor CORPORATION, ssm6n16fe Datasheet - Page 4

• Manufacturer Part Number: ssm6n16fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(Q1, Q2 common)
500
300
100
250
200
150
100
100
0.5
0.3
50
30
10
30
50
50
10
0.1
5
3
1
5
3
1
0
1
0
Common source
V DS = 3 V
Ta = 25°C
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
0.3
Drain-Source voltage V DS (V)
Ambient temperature Ta (°C)
0.5
40
Drain current I D (mA)
10
1
⎪Y
P
C – V
D
fs
* – Ta
80
⎪ – I
3
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t
Cu Pad: 0.135 mm
*: Total Rating
DS
5
D
100
10
120
C oss
C rss
C iss
30
2
× 6)
50
1000
100
160
4
5000
3000
1000
250
200
150
100
500
300
100
50
50
30
10
0
0.1
0
Common source
V GS = 0 V
Ta = 25°C
t off
t f
−0.2
G
t on
t r
Drain-Source voltage V DS (V)
−0.4
Drain current I D (mA)
1
D
S
I
−0.6
DR
I DR
t – I
– V
D
−0.8
DS
10
−1
Common source
V DD = 3 V
V GS = 0~2.5 V
Ta = 25°C
SSM6N16FE
−1.2
2007-11-01
−1.4
100