ssm3j111tu TOSHIBA Semiconductor CORPORATION, ssm3j111tu Datasheet
ssm3j111tu
Manufacturer Part Number
ssm3j111tu
Description
Field Effect Transistor Silicon P-channel Mos Type High Speed Switching Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM3J111TU.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ssm3j111tu(TE85L)
Manufacturer:
Toshiba
Quantity:
1 935
High Speed Switching Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
2.5V drive
Low on-resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on ceramic board.
Note 2: Mounted on FR4 board.
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain-Source forward voltage
Note3: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
DC
Pulse
R
R
on
on
= 480mΩ (max) (@V
= 680mΩ (max) (@V
(Ta = 25°C)
SSM3J111TU
V
P
P
R
(Ta = 25°C)
Symbol
(BR) DSS
Symbol
D (Note 1)
D (Note 2)
⏐Y
DS (ON)
V
I
I
C
V
C
C
DSS
GSS
V
V
t
t
T
DSF
T
I
oss
on
off
GSS
rss
iss
I
DP
th
fs
DS
stg
D
ch
⏐
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
GS
GS
DS
GS
DS
DS
DS
DS
DS
DD
GS
= −1 mA, V
= −0.3 A, V
= −0.3 A, V
= 1A, V
= −20 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= −10 V, V
= −10 V, V
= −10 V, I
−55~150
= ±12V, V
= 0~−2.5 V, R
= −4 V)
= −2.5 V)
Rating
± 12
−20
800
500
150
−1
−2
1
GS
2
2
)
)
Test Conditions
D
D
= 0 V
GS
GS
GS
D
DS
= −0.1 mA
=− 0.3 A
GS
GS
GS
GS
= −0.3 A,
= 0
= −4.0 V
= −2.5 V
= 0
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note3)
(Note3)
(Note3)
(Note3)
Weight: 6.6 mg (typ.)
JEDEC
JEITA
TOSHIBA
UFM
−0.6
Min
−20
0.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1: Gate
2: Source
3: Drain
1
2
Typ.
0.85
380
530
160
1.2
SSM3J111TU
90
25
27
43
⎯
⎯
⎯
⎯
2.1±0.1
1.7±0.1
2-2U1A
2007-11-01
―
―
Max
−1.1
480
680
1.2
⎯
−1
±1
⎯
⎯
⎯
⎯
⎯
⎯
Unit: mm
3
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S
V
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ssm3j111tu Summary of contents
Page 1
... − −0 0~−2 4.7 Ω off = 1A DSF SSM3J111TU 2.1±0.1 1.7±0 Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Min Typ. Max −20 ⎯ ...
Page 2
... V IN OUT OUT V Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on) 2 SSM3J111TU 0 V 10% 90% −2 (ON) 90% 10 off D and V requires a lower th, GS (off) ) 2007-11-01 f =−0.1mA for ...
Page 3
... SSM3J111TU 2007-11-01 ...
Page 4
... Cu Pad :25.4mm×25.4mm 10 b:Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c:Mounted on FR4 Board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 1 0.001 0.01 0.1 1 Pulse w idth tw (S) 4 SSM3J111TU 10 100 1000 2007-11-01 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J111TU 20070701-EN GENERAL 2007-11-01 ...