ssm3j111tu TOSHIBA Semiconductor CORPORATION, ssm3j111tu Datasheet - Page 4

• Manufacturer Part Number: ssm3j111tu
• Description: Field Effect Transistor Silicon P-channel Mos Type High Speed Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
800
600
400
200
0
0
b
a
20
Ambient temperature Ta(°C)
40
60
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
PD - Ta
80
100 120 140 160
4
1000
100
10
1
0.001
0.01
0.1
Pulse w idth tw (S)
Rth - tw
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
1
c
b
a
10
SSM3J111TU
100
2007-11-01
1000