ssm3j312t TOSHIBA Semiconductor CORPORATION, ssm3j312t Datasheet

ssm3j312t

Manufacturer Part Number

ssm3j312t

Description

Toshiba Field Effect Transistor Silicon P-channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3J312T.pdf (6 pages)

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High Speed Switching Applications

Power Management Switch Applications

•

Absolute Maximum Ratings

Electrical Characteristics

1.8V drive

Low on-resistance:

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Note 1: Mounted on FR4 board.

Drain-Source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain-Source on-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Switching time

Drain-Source forward voltage

Note2: Pulse test

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm

Characteristic

Turn-on time

Turn-off time

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

Pulse

= 237mΩ (max) (@V

= 142mΩ (max) (@V

= 91mΩ (max) (@V

(Ta = 25°C)

Symbol

SSM3J312T

(BR) DSS

(BR) DSX

Symbol

D (Note 1)

⏐Y

DS (ON)

DSS

GSS

DSF

oss

off

GSS

rss

iss

stg

⏐

= −1 mA, V

= −1.0 A, V

= −0.75 A, V

= −0.3 A, V

= 2.7A, V

= −12 V, V

= −3 V, I

= −10 V, V

= −6 V, I

= −10 V, I

−55~150

= ±8V, V

= −4 V

= 0~−2.5 V, R

= −1.8 V)

= −2.5 V)

= −4.0 V)

Rating

−2.7

−5.4

−12

700

150

± 8

)

Test Conditions

= −1 mA

=− 1 A

= 0 V

= −2.7 A

= −0.75 A,

= 0

= +8 V

= −4.0 V

= −1.8 V

= −2.5 V

= 0

= 0, f = 1 MHz

= 4.7 Ω

Unit

°C

(Note2)

Weight: 10 mg (typ.)

JEDEC

JEITA

TOSHIBA

TSM

−0.3

Min

−12

2.7

−4

⎯

Typ.

0.85

137

550

170

155

4.5

7.5

6.0

1.5

⎯

１

２

SSM3J312T

2.8-0.3

1.6-0.1

2-3S1A

+0.2

2007-11-01

―

Max

−1.0

−10

142

237

1.2

⎯

±1

⎯

1.GATE

2.SOURCE

3.DRAIN

３

Unit: mm

Unit

mΩ

μA

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ssm3j312t Summary of contents

Page 1

... − −0. 0~−2 4.7 Ω off = 2.7A DSF SSM3J312T +0.2 2.8-0.3 +0.2 1.6-0.1 １ V ２ TSM JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) Min Typ. Max −12 ⎯ −4 ⎯ ⎯ ⎯ ...

... V IN OUT OUT V Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on) 2 SSM3J312T 0 V 10% 90% −2 (ON) 90% 10 off D and V requires a lower th, GS (off) ) 2007-11-01 f =−1mA for ...

Page 3

... Common Source 160 120 -50 -8 -10 -1 -0.8 -0.6 -0.4 -0 SSM3J312T ID - VGS °C 25 ° °C Common Source VDS = - Gate-Source voltage VGS (V) RDS(ON − 1 − 0.3 A − 2 − 0.75 A VGS = − − 100 150 Ambient temperature Ta( ℃ ) Vth - Ta Common Source ...

Page 4

... Total Gate Charge Qg (nC) -10 Common Source VGS=0V Ta=25°C -1 -0.1 -0.01 -0.001 0 -10 1000 toff 100 tf ton -0.01 100 SSM3J312T IDR - VDS 25°C − 25°C Ta=85°C 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 to 2.5V Ta=25°C -0.1 -1 -10 Drain current ID (A) 2007-11-01 ...

Page 5

... Pulse width t (s) w 1000 800 a 600 b 400 200 0 -40 -20 100 1000 Ambient temperature T 5 SSM3J312T P – Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 0.8 mm × ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J312T 20070701-EN GENERAL 2007-11-01 ...

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ssm3j312t TOSHIBA Semiconductor CORPORATION, ssm3j312t Datasheet

ssm3j312t

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ssm3j312t Summary of contents

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