ssm3j312t TOSHIBA Semiconductor CORPORATION, ssm3j312t Datasheet - Page 2

• Manufacturer Part Number: ssm3j312t
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Marking
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
Handling Precaution
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
(a) Test circuit
V
Take this into consideration when using the device.
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
th
−
can be expressed as the voltage between gate and source when the low operating current value is I
2.5V
1
JJ3
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
3
DD
IN
G
10 μs
th.
: t
= 4.7 Ω
= -10 V
r
, t
f
2
< 5 ns
IN
Equivalent Circuit
R
V
OUT
L
DD
GS (on)
1
GS (off)
3
requires a higher voltage than V
(b) V
(c) V
< V
2
th
OUT
IN
2
(top view)
< V
GS (on)
V
V
DD
DS (ON)
−2.5 V
)
0 V
t
on
th,
10%
and V
t
r
90%
10%
GS (off)
t
90%
off
SSM3J312T
requires a lower
D
2007-11-01
t
f
=−1mA for