ssm3j36tu TOSHIBA Semiconductor CORPORATION, ssm3j36tu Datasheet

ssm3j36tu

Manufacturer Part Number

ssm3j36tu

Description

Toshiba Field Effect Transistor Silicon P Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3J36TU.pdf (5 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM3J36TU

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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○ Power Management Switches

•

Absolute Maximum Ratings (Ta = 25 °C)

Marking

Handling Precaution

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

SSM3J36TU). Then, for normal switching operation, V

th.

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

Let V

1.5-V drive

Low ON-resistance: R

Characteristic

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

Note1: Mounted on an FR4 board

Note2: Mounted on a ceramic board.

This relationship can be expressed as: V

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

be the voltage applied between gate and source that causes the drain current (I

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

P X

: R

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Pulse

= 3.60 Ω (max) (@V

= 2.70 Ω (max) (@V

= 1.60 Ω (max) (@V

= 1.31 Ω (max) (@V

SSM3J36TU

Symbol

GSS

DSS

(Note1)

(Note2)

stg

GS(off)

Equivalent Circuit

< V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

GS(on)

−55 to 150

Rating

< V

-330

-660

500

800

150

)

-20

±8

)

must be higher than V

GS(on).

Take this into consideration when using the device.

Unit

°C

(top view)

th,

Weight: 6.6mg (typ.)

JEDEC

JEITA

TOSHIBA

and V

UFM

) to below −1 mA for the

GS(off)

must be lower than

2.1±0.1

1.7±0.1

SSM3J36TU

2-2U1A

2008-06-11

1: Gate

2: Source

3: Drain

―

Unit: mm

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ssm3j36tu Summary of contents

Page 1

... Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3J36TU). Then, for normal switching operation This relationship can be expressed as: V th. SSM3J36TU = -1 ...

Page 2

... -2 50Ω off =330mA DSF OUT OUT V 2 SSM3J36TU Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ -12 ⎯ ⎯ -10 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ⎯ (Note3) 190 ⎯ (Note3) 0.95 1.31 ⎯ ...

Page 3

... Gate-source voltage V 5 Common Source Ta = 25° -1 -4.5 V − 25 ° -100 -1.0 -0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM3J36TU I – − 25 °C -1.0 -2.0 ( – (ON) D -200 -300 -400 -500 -600 -700 Drain current I (mA – Ta ...

Page 4

... C iss 1000 t off oss C rss 100 -100 -1 (V) 1000 800 a 600 b 400 200 0 3 -40 -20 4 SSM3J36TU I – =100 °C 25 °C −25 °C 0.4 0.6 0.8 1.0 1.2 ( – Common Source - -2 ° 50Ω ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J36TU 20070701-EN GENERAL 2008-06-11 ...

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