ssm3j36tu TOSHIBA Semiconductor CORPORATION, ssm3j36tu Datasheet - Page 4

• Manufacturer Part Number: ssm3j36tu
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
300
100
100
30
10
50
30
10
5
3
1
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.33 A
Ta = 25°C
Drain-source voltage V
V DD =-10V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Drain current I
-10
-1
1
|Y
C – V
fs
| – I
V DD = - 16 V
DS
D
D
-10
-100
(mA)
DS
2
C oss
C rss
(V)
C iss
-1000
-100
3
4
10000
1000
1000
1000
100
100
0.1
800
600
400
200
10
10
1
0
0
-40
-1
t on
G
t f
t r
Common Source
V GS = 0 V
t off
b
a
-20
0.2
Drain-source voltage V
S
Ambient temperature Ta (°C)
D
Ta =100 °C
0
I
DR
Drain current I
20
0.4
-10
I
40
DR
P
t – I
D
a: Mounted on ceramic board
b: Mounted on FR4 Board
– V
– T
0.6
(25.4mm × 25.4mm × 0.8mm ,
Cu Pad: 645 mm
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad: 645 mm
60
D
a
DS
−25 °C
80
D
-100
0.8
DS
100
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
SSM3J36TU
(mA)
2
2
120
(V)
)
)
1.0
2008-06-11
140
-1000
1.2
160