ssm3j56mfv TOSHIBA Semiconductor CORPORATION, ssm3j56mfv Datasheet
ssm3j56mfv
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ssm3j56mfv Summary of contents
Page 1
... T stg and the significant change etc.) are within Equivalent Circuit (top view vary depending on board material, board area, board thickness D 1 SSM3J56MFV VESM JEDEC ― in JEITA ― TOSHIBA 2-1L1B the Weight: 1.5mg (typ.) 2011-05-09 Unit: mm 1.Gate 2.Source 3.Drain ...
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... 800 mA DSF OUT (ON) (c) V OUT requires a higher voltage than V GS (on) GS (off) 2 SSM3J56MFV Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ .(Note 5) -15 ⎯ ⎯ -1 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ (Note 4) 0.5 1.0 ⎯ (Note 4) ...
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... Gate–source voltage V 1.6 1.2 0.8 0.4 -25 ° Gate–source voltage V 1.6 12 0.8 0 150 3 SSM3J56MFV I – -25 °C Common Source Pulse test -1.0 -2.0 ( – (ON -800 mA Common Source Pulse test 25 ° 100 °C -25 °C -2 ...
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... Common Source 25° MHz -0.1 1.5 Drain–source voltage V (V) -8 Common Source -800 25°C -6 VDD = - -10 4 SSM3J56MFV |Y | – -0.1 -0.01 -10 Drain current I ( – iss C oss C rss -1 -10 -100 (V) DS Dynamic Input Characteristic ...
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... Ambient temperature Ta (°C) 5 SSM3J56MFV P – Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm Pad : 645 Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm Pad : 0.585 100 150 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J56MFV 2011-05-09 ...