ssm3j56mfv TOSHIBA Semiconductor CORPORATION, ssm3j56mfv Datasheet - Page 2

• Manufacturer Part Number: ssm3j56mfv
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Notice on Usage
this product. For normal switching operation, V
voltage than V
V
Take this into consideration when using the device.
Electrical Characteristics
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source forward voltage
Note 4: Pulse test
Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode.
(a) Test Circuit
th
−
2.5V
can be expressed as the voltage between gate and source when the low operating current value is I
0
Note that the drain-source breakdown voltage is lowered in this mode.
10 μs
V
R
Duty < = 1%
V
Common Source
Ta = 25°C
Characteristic
th.
DD
IN
G
: t
(The relationship can be established as follows: V
= 50 Ω
= -10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
R
V
OUT
V
V
L
DD
(Ta = 25°C)
R
Symbol
(BR) DSS
(BR) DSX
⏐Y
V
DS (ON)
I
Q
I
C
C
C
Q
GSS
DSS
V
t
Q
t
DSF
off
oss
on
gs1
rss
iss
gd
th
fs
g
⏐
GS (on)
I
I
V
V
V
V
I
I
I
I
I
V
f = 1 MHz
V
V
V
V
I
D
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
DD
GS
= -1 mA, V
= -1 mA, V
= -800 mA, V
= -500 mA, V
= -200 mA, V
= -100 mA, V
= -10 mA, V
= 800 mA, V
(b) V
(c) V
requires a higher voltage than V
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= ±8 V, V
= -10 V, I
= 0 to -2.5 V, R
= -10 V, I
= -4.5 V
2
OUT
IN
Test Conditions
D
D
GS
GS
D
D
DS
GS
= -1 mA
= -100 mA
GS
GS
GS
GS
GS
GS
GS
= -200 mA
= -800 mA,
= 0 V
= 5 V
= 0 V
= -1.2 V
= 0 V
= 0 V
GS (off)
= 0 V
= -4.5 V
= -2.5 V
= -1.8 V
= -1.5 V
G
= 50 Ω
V
V
DD
DS (ON)
−2.5 V
< V
0 V
.(Note 5)
th
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
< V
GS (on).
th
t
on
90%
-0.3
Min
and V
-20
-15
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
)
t
r
90%
10%
GS (off)
Typ.
310
380
470
560
770
100
1.0
1.6
0.2
0.4
0.9
16
10
26
⎯
⎯
⎯
⎯
⎯
8
SSM3J56MFV
t
10%
off
requires a lower
4000
Max
-1.0
390
480
660
900
1.2
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
D
2011-05-09
t
f
= -1 mA for
Unit
mΩ
nC
μA
μA
pF
ns
V
V
V
S
V