as7c331mntd32a Alliance Memory, Inc, as7c331mntd32a Datasheet

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as7c331mntd32a

Manufacturer Part Number
as7c331mntd32a
Description
Manufacturer
Alliance Memory, Inc
Datasheet
Logic block diagram
Selection guide
Features
• Organization: 1,048,576 words × 32 or 36 bits
• NTD
• Fast clock speeds to 200 MHz
• Fast clock to data access: 3.2/3.5/3.8 ns
• Fast OE access time: 3.2/3.5/3.8 ns
• Fully synchronous operation
• Asynchronous output enable control
• Available in 100-pin TQFP packages
• Byte write enables
December 2004
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
12/23/04, V 1.6
architecture for efficient bus operation
A[19:0]
CE1
CE2
CE0
DQ[a,b,c,d]
ADV / LD
BWa
BWb
BWc
BWd
LBO
3.3V 1M × 32/36 Pipelined SRAM with NTD
R/W
ZZ
CLK
CEN
32/36
20
D
D
Control
Burst logic
Address
Register
register
logic
CLK
Input
Data
CLK
Alliance Semiconductor
CLK
Q
Q
-200
200
450
170
3.2
90
5
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate V
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
20
OE
32/36
D
addr. registers
CLK
Write delay
®
-166
166
400
150
3.5
90
6
32/36
Q
OE
CLK
32/36
CLK
Output
Register
32/36
1M x 32/36
DQ[a,b,c,d]
20
TM
SRAM
32/36
Array
AS7C331MNTD32A
AS7C331MNTD36A
Copyright © Alliance Semiconductor. All rights reserved.
-133
133
350
140
7.5
3.8
90
P. 1 of 18
Units
MHz
mA
mA
mA
DDQ
ns
ns

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as7c331mntd32a Summary of contents

Page 1

... Burst logic CLK D Write delay addr. registers CLK Control logic CLK 32/36 Data 32/ Input Register CLK OE -200 5 200 3.2 450 170 90 Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A TM DDQ Q 20 CLK 1M x 32/36 SRAM Array 32/36 32/36 32/36 CLK Output Register OE 32/36 DQ[a,b,c,d] -166 -133 Units 6 7.5 ns 166 133 MHz 3 ...

Page 2

... PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD- Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A Speed 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/10 ns 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/ ...

Page 3

... V 26 SSQ V 27 DDQ 28 DQd6 29 DQd7 30 NC/DQPd Note: For pins 1, 30, 51, and 80, NC applies to the x32 configuration. DQPn applies to the x36 configuration. 12/23/04, V 1.6 ® TQFP 14 x 20mm Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A DQPb/ DQb7 78 DQb6 77 V DDQ 76 V SSQ 75 DQb5 74 DQb4 DQb3 ...

Page 4

... Functional description The AS7C331MNTD32A/36A family is a high performance CMOS 32 Mbit Synchronous Static Random Access Memory (SRAM) organized as 1,048,576 words × bits and incorporates a LATE LATE Write. This variation of the 32Mb synchronous SRAM uses the No Turnaround Delay (NTD that improves bandwidth over pipelined burst devices normal pipelined burst device, the write data, command, and address are all applied to the device on the same clock edge ...

Page 5

... DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE PUS MODE. 12/23/04, V 1.6 ® or left floating, device follows interleaved Burst order. When DD is guaranteed after the time t is met. After entering SNOOZE MODE, all inputs except ZZ SB2 ZZI Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A . The duration of SB2 ...

Page 6

... External NOP/WRITE ABORT (Begin Burst) High Next Current enables WRITEs to byte “b” (DQb pins); Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A ...

Page 7

... I OUT T stg T bias Symbol Min V 3.135 DD V 3.135 DDQ Vss 0 Symbol Min V 3.135 DD V 2.375 DDQ Vss 0 Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A Burst Dsel Burst Burst Min Max Unit –0.5 +4.6 –0 0.5 DD –0 0.5 DDQ – 1.8 – –65 +150 –65 +135 ...

Page 8

... V All V – 0.2V, Deselected < Max IL Deselected < 0.2V, ≤ 0.2V or ≥ V all V – 0. ≥ V Deselected Max DD ≤ ≥ V all Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A Min Max -2 2 < OUT DDQ * +0.3 DDQ ** -0.3 0.8 ** -0.5 ...

Page 9

... ADVS t 0.4 – 0.5 ADVH t 2 – 2 PDS t 2 – 2 PUS Conditions Symbol ZZ > SB2 t PDS t PUS t ZZI t RZZI Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A -133 1 Unit Notes Max Min Max 166 – 133 MHz – 7.5 – ns 3.5 – 3.8 ns 3.5 – 3.8 ns – 0 – ns 2,3,4 – 1.5 – ...

Page 10

... Falling input HZOE OE Q(A1) Q(A2) Q(A2Y‘01) Read Continue Continue Continue Q(A2) Read Read Q(A2Y‘10) Q(A2Y‘01) Q(A2Y‘11) Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A Undefined t CYC A3 Q(A2Y‘10) Q(A3) Q(A2Y‘11) Continue Inhibit Read Read Read Clock Q(A3) Q(A3Y‘01 HLZC ...

Page 11

... Dout Q(n-2) Q(n-1) Write DSEL D(A1) 12/23/04, V 1.6 ® D(A1) D(A2) D(A2Y‘01) Write Continue Continue Continue D(A2) Write Write Write D(A2Y‘10) D(A2Y‘01) D(A2Y‘11) Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A t CYC D(A3) D(A2Y‘10) D(A2Y‘11) Continue Inhibit Write Write Clock D(A3) D(A3Y‘01 ...

Page 12

... Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low. BW[a:d] is don’t care. 12/23/04, V 1.6 ® LZC OH D(A1) D(A2) Q(A3) D(A2Ý01) Burst Burst Read Read Write Read Q(A3) Q(A4) D(A2Ý01) Q(A4Ý01) Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A t CYC HZC D(A5) Q(A6) Q(A4) Q(A4Ý01) t HZOE t LZOE Write Read Write D(A5) Q(A6) D(A7 DSEL ...

Page 13

... Command Read Burst Q(A1) Q(A1Ý01) Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low low. 12/23/04, V 1.6 ® A2 Q(A1Ý01) Q(A1) Q(A1Ý10) STALL Burst DSEL Burst Q(A1Ý10) DSEL Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A A3 D(A2) Burst Write Write Burst NOP NOP D(A2) D(A2Ý10) D(A2Ý01) D(A3 ...

Page 14

... Timing waveform of snooze mode CLK ZZ setup cycle ZZ t ZZI I supply I SB2 All inputs Deselect or Read Only (except ZZ) Dout 12/23/04, V 1.6 ® t PUS ZZ recovery cycle t RZZI Deselect or Read Only High-Z Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A Normal operation Cycle ...

Page 15

... L for 3.3V I/ DDQ for 2.5V I/O Figure B: Output load (A) at any given temperature and voltage. LZC IL Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A Thevenin equivalent: +3.3V for 3.3V I/O; /+2.5V for 2.5V I/O 319Ω/1667Ω D 7Ω OUT 5 pF* 353Ω/1538Ω GND *including scope and jig capacitance Figure C: Output load(B) P ...

Page 16

... Package dimensions 100-pin quad flat pack (TQFP) TQFP Min Max A1 0.05 0.15 A2 1.35 1.45 b 0.22 0.38 c 0.09 0.20 D 13.90 14.10 E 19.90 20.10 e 0.65 nominal Hd 15.90 16.10 He 21.90 22.10 L 0.45 0.75 L1 1.00 nominal α 0° 7° Dimensions in millimeters 12/23/04, V 1.6 ® Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A b e α ...

Page 17

... Operating temperature commercial ( 0° 70° C industrial ( -40 ° 85° Lead Free Part 12/23/04, V 1.6 ® –166 MHz AS7C331MNTD32A-166TQC AS7C331MNTD32A-166TQI AS7C331MNTD36A-166TQC AS7C331MNTD36A-166TQI AS7C331MNTD32A-200TQCN) NTD 32/36 A –XXX Alliance Semiconductor AS7C331MNTD32A AS7C331MNTD36A –133 MHz AS7C331MNTD32A-133TQC AS7C331MNTD32A-133TQI AS7C331MNTD36A-133TQC AS7C331MNTD36A-133TQI TQ C ...

Page 18

... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. AS7C331MNTD32A AS7C331MNTD36A ® Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C331MNTD32A / AS7C331MNTD36A Document Version: V 1.6 ...

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