bs62lv8003bi Brillance Semiconductor, bs62lv8003bi Datasheet - Page 5

• Manufacturer Part Number: bs62lv8003bi
• Description: Very Power/voltage Cmos Sram
• Manufacturer: Brillance Semiconductor

R0201-BS62LV8003
READ CYCLE2
READ CYCLE1
READ CYCLE3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
5. Transition is measured
SWITCHING WAVEFORMS (READ CYCLE
The parameter is guaranteed but not 100% tested.
ADDRESS
D
BSI
CE2
CE1
D
ADDRESS
OE
CE1
OUT
CE2
IL
OUT
D
.
OUT
(1,3,4)
(1,2,4)
(1,4)
±
500mV from steady state with C
t
t
IL
OH
CLZ
and CE2 = V
(5)
t
t
t
CLZ
t
ACS1
ACS2
AA
)
(5)
t
L
5
= 5pF as shown in Figure 1B.
ACS1
t
t
t
IH
AA
OLZ
.
ACS2
t
RC
t
t
OE
RC
BS62LV8003
t
t
OHZ
CHZ
t
(1,5)
OH
t
t
(5)
OH
CHZ
(5)
Revision 2.4
April 2002