njg1125pb5 New Japan Radio Co.,Ltd, njg1125pb5 Datasheet - Page 24

• Manufacturer Part Number: njg1125pb5
• Description: Njg1125pb5 W-cdma Triple Lna Gaas Mmic
• Manufacturer: New Japan Radio Co.,Ltd

NJG1125PB5
- 24 -
ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode)
-10
-15
-20
-25
3.5
2.5
1.5
0.5
10
-5
5
0
4
3
2
1
0
750
-40
Condition
Condition
Ta=+25°C,
f=750M~1GHz,
V
V
Ta=+25°C,
f=885MHz,
V
V
DD
CTL
DD
CTL
P-1dB(IN)=-12.0dBm
=V
=V
800
-30
1=1.85V, V
1=1.85V, V
800MHz@High Gain
800MHz@High Gain
Pout
NF
NF vs. frequency
INV
INV
=2.7V,
frequency (MHz)
=2.7V,
Pout vs. Pin
850
-20
Pin (dBm)
CTL
CTL
2=0V, V
2=0V, V
900
-10
CTL
CTL
950
0
3=1.85V
3=1.85V
1000
10
-100
-20
-40
-60
-80
20
18
16
14
12
10
20
8
6
4
0
-40
-40
Condition
Condition
Ta=+25°C,
f=885MHz,
V
V
Ta=+25°C,
f1=885MHz, f2=f1+100kHz,
V
V
Gain
Pout
DD
CTL
DD
CTL
P-1dB(IN)=-12.0dBm
= V
= V
-30
-30
1=1.85V, V
1=1.85V, V
800MHz@High Gain
800MHz@High Gain
Pout, IM3 vs. Pin
INV
INV
Gain, IDD vs. Pin
IM3
RF Power (dBm)
=2.7V,
=2.7V,
-20
-20
Pin (dBm)
CTL
CTL
IIP3=+2.0dBm
2=0V, V
2=0V, V
-10
-10
CTL
CTL
0
0
3=1.85V
3=1.85V
IDD
10
10
8
6
4
2
0