njg1125pb5 New Japan Radio Co.,Ltd, njg1125pb5 Datasheet - Page 26
![no-image](/images/no-image-200.jpg)
njg1125pb5
Manufacturer Part Number
njg1125pb5
Description
Njg1125pb5 W-cdma Triple Lna Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet
1.NJG1125PB5.pdf
(59 pages)
- Current page: 26 of 59
- Download datasheet (2Mb)
NJG1125PB5
- 26 -
ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode)
-10
-12
-14
-16
-18
19
18
17
16
15
14
13
12
11
-2
-4
-6
-8
2.4
2.4
Condition
Condition
Ta=+25°C,
f=885MHz,
V
Ta=+25°C,
f=885MHz,
V
CTL
2.6
2.6
CTL
P-1dB(IN) vs. V
Gain, NF vs. V
Gain
800MHz@High Gain
800MHz@High Gain
1=1.85V, V
1=1.85V, V
P-1dB(IN)
2.8
2.8
V
V
DD
DD
3
3
=V
=V
CTL
INV
INV
CTL
3.2
3.2
2=0V, V
(V)
(V)
2=0V, V
DD
DD
3.4
3.4
, V
NF
, V
CTL
INV
CTL
INV
3.6
3.6
3=1.85V
3=1.85V
3.8
3.8
4.5
4
3.5
3
2.5
2
1.5
1
0.5
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
3.5
2.5
1.5
0.5
4
3
2
1
0
2.4
2.4
Condition
Condition
Ta=+25°C,
f1=885MHz, f2=f1+100kHz,
Pin=-30dBm,
V
Ta=+25°C,
f=885MHz,
V
2.6
2.6
CTL
CTL
OIP3, IIP3 vs. V
800MHz@High Gain
VSWR vs. V
OIP3
800MHz@High Gain
1=1.85V, V
1=1.85V, V
2.8
2.8
V
V
DD
DD
3
3
=V
=V
CTL
CTL
INV
INV
3.2
3.2
2=0V, V
DD
2=0V, V
(V)
(V)
, V
DD
3.4
3.4
IIP3
INV
, V
CTL
CTL
VSWRi
VSWRo
INV
3.6
3.6
3=1.85V
3=1.85V
3.8
3.8
4.0
3.0
2.0
1.0
0.0
-1.0
-2.0
-3.0
-4.0
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