k4s160822d Samsung Semiconductor, Inc., k4s160822d Datasheet - Page 5

• Manufacturer Part Number: k4s160822d
• Description: 2mx8 Sdram 1m X 8bit X 2 Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

K4S160822D
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS
CAPACITANCE
Recommended operating conditions (Voltage referenced to V
Notes :
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current (Inputs)
input leakage current (I/O pins)
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled, 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
7
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
Parameter
supply relative to V
Pin
(V
V
DD
IN
= 3.3V, T
V
SS
DDQ
V
OUT
SS
.
V
A
Symbol
DD
= 23 C, f = 1MHz, V
V
V
V
V
V
I
, V
I
DDQ.
LO
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
IN
C
C
C
T
Min
-0.3
3.0
2.0
2.4
-10
-10
C
, V
I
P
ADD
OUT
, V
CLK
STG
OS
-
IN
D
OUT
DDQ
REF
SS
= 0V, T
= 1.4V 200 mV)
- 5 -
3ns.
3ns.
A
Typ
3.3
3.0
= 0 to 70 C)
0
-
-
-
-
Min
2.5
2.5
2.5
4.0
V
DDQ
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
10
Value
-
+0.3
50
1
Max
4.0
5.0
5.0
6.5
Unit
uA
uA
V
V
V
V
V
CMOS SDRAM
Rev. 1.0 (Oct. 1999)
I
Unit
I
OH
mA
OL
W
V
V
C
Unit
Note
pF
pF
pF
pF
= -2mA
3,4
= 2mA
1
2
3