k4h560838f-uccc ETC-unknow, k4h560838f-uccc Datasheet - Page 13

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k4h560838f-uccc

Manufacturer Part Number
k4h560838f-uccc
Description
Ddr Sdram Ddr Sdram 256mb F-die X8, X16
Manufacturer
ETC-unknow
Datasheet

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Manufacturer
Quantity
Price
Part Number:
K4H560838F-UCCC
Manufacturer:
SAMSUNG
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Part Number:
K4H560838F-UCCC
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Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
DDR SDRAM 256Mb F-die (x8, x16)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
AC Operating Conditions
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
Parameter/Condition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.5V
0
Parameter
AC overshoot/Undershoot Definition
Area = 4.5V-ns
0.5
0.6875
VDD
1.0
Overshoot
1.5
2.0
2.5
3.0
Symbol
VIH(AC)
VIL(AC)
VIX(AC)
VID(AC)
Tims(ns)
3.5
4.0
4.5
0.5*VDDQ-0.2
VREF + 0.31
5.0
Maximum Amplitude = 1.5V
5.5
Min
0.7
undershoot
GND
6.0
6.3125
6.5
0.5*VDDQ+0.2
7.0
VREF - 0.31
VDDQ+0.6
Rev. 1.1 August. 2003
Max-10
DDR SDRAM
Specification
DDR400
4.5V-ns
4.5V-ns
1.5V
1.5V
Unit
V
V
V
V
Note
1
2

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