k4s560432d Samsung Semiconductor, Inc., k4s560432d Datasheet - Page 5

• Manufacturer Part Number: k4s560432d
• Description: 16m X 4bit X 4 Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
K4S560432D
Note :
DC OPERATING CONDITIONS
Notes :
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75/7C only specify a maximum value of 3.5pF
2. -75/7C only specify a maximum value of 3.8pF
3. -75/7C only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
V
.
Symbol
DD
A
V
= 23 C, f = 1MHz, V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
V
C
C
C
V
C
Symbol
DD
ADD
OUT
CLK
IN
Min
-0.3
3.0
2.0
2.4
-10
IN
T
, V
I
-
, V
P
STG
OS
D
REF
OUT
DDQ
SS
= 0V, T
=1.4V
3ns.
3ns.
A
Min
Typ
2.5
2.5
2.5
4.0
3.3
3.0
200 mV)
= 0 to 70 C)
0
-
-
-
V
-55 ~ +150
DD
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
Max
-
4.0
5.0
5.0
6.5
Value
+0.3
50
1
Rev. 0.0 Jan. 2002
Unit
uA
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
I
Unit
I
OH
mA
OL
W
V
V
C
Note
= -2mA
Note
= 2mA
1
2
3
1
2
2
3