mt18lsdf6472y-133 Micron Semiconductor Products, mt18lsdf6472y-133 Datasheet - Page 13

• Manufacturer Part Number: mt18lsdf6472y-133
• Description: 512mb X72, Ecc, Sr 168-pin Sdram Rdimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Figure 7:
Table 8:
Table 9:
PDF: 09005aef80a2e32f/Source: 09005aef80d04a5a
SDF18C64x72G.fm - Rev. E 9/05 EN
Parameter
Voltage on V
Voltage on inputs, NC or I/O pins relative to V
Operating temperature,
T
Storage Temperature (plastic)
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage currrent:
Any input 0V ≤ VIN ≤ V
(All other pins not under test = 0V)
Output leakage currrent: DQ pins are disabled;
0V ≤ V
Output levels: Output High Voltage (I
Output Low Voltage (I
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-Down mode; All device banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
device banks active after
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
Auto refresh current
CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
RC =
OPR
(Commercial - ambient)
t
OUT
RC (MIN)
≤ V
DD
DD
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on pages 16 and 17; V
I
Notes: 1, 5, 6, 11, 13; notes appear on pages 16 and 17; V
only
Absolute Maximum Ratings
DD
supply, relative to V
Q
Specifications and Conditions
OUT
DD
t
RCD met; No accesses in progress
= 4mA)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
SS
OUT
= -4mA)
SS
t
t
RC =
RFC = 7.8125µs
Command and
address inputs,
CK, CKE
DQ
DQMB
t
RFC (MIN)
512MB (x72, ECC, SR): 168-PIN SDRAM RDIMM
13
DD
V
, V
Symbol
Symbol
DD
V
I
I
I
I
I
I
I
V
DD
V
, V
I
DD
DD
DD
DD
DD
DD
DD
V
OZ
OH
I
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
IL
I
DD
Q = +3.3V ±0.3V
1
2
3
4
5
6
7
DD
, V
Q
DD
Q = +3.3V ±0.3V; SDRAM component values
2,430
2,430
5,130
-13E
Min
720
-0.3
-10
36
63
45
2.4
-5
-5
3
2
–
Max
Electrical Specifications
V
2,250
2,430
4,860
-133
DD
720
Max
36
63
45
Min
-1V
-1V
0°C
-55
3.6
0.8
0.4
10
5
5
–
+ 0.3
©2001 Micron Technology, Inc. All rights reserved.
Units
mA
mA
mA
mA
mA
mA
mA
Units
Max
+150
+4.6
+4.6
+55
µA
µA
V
V
V
V
V
18, 19, 30, 31
3, 18, 19, 30
3, 12, 19, 30
3, 18, 19, 30
Notes
3, 12
Notes
Units
30
4
22
22
34
34
°C
°C
V
V