mt16vddf6464hy-40b Micron Semiconductor Products, mt16vddf6464hy-40b Datasheet
mt16vddf6464hy-40b
Related parts for mt16vddf6464hy-40b
mt16vddf6464hy-40b Summary of contents
Page 1
... MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For the latest component data sheet, refer to the Micron's Web site: Features • 200-pin, small-outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC3200 • Utilizes 400 MT/s DDR SDRAM components • 512MB (64 Meg x 64), 1GB (128 Meg x 64) • ...
Page 2
... Device configuration Device column addressing Module rank addressing Table 2: Part Numbers and Timing Parameters – 512MB Module Part Number Density MT16VDDF6464HG-40B__ MT16VDDF6464HY-40B__ Table 3: Part Numbers and Timing Parameters – 1GB Module Part Number Density MT16VDDF12864HG-40B__ MT16VDDF12864HY-40B__ Note: All part numbers end with a two-place code (not shown), designating component and PCB revisions ...
Page 3
Pin Assignments and Descriptions Table 4: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS ...
Page 4
... SDA Input/ Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data Output into and out of the presence-detect portion of the module. DQS0–DQS7 Input/ Data strobe: Output with READ data, input with WRITE data. DQS is edge-aligned with READ Output data, centered in WRITE data. Used to capture data. DQ0– ...
Page 5
Functional Block Diagrams Figure 2: Functional Block Diagram – 512MB S1# S0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS2 DM2 DM CS# DQS DQ16 DQ ...
Page 6
Figure 3: Functional Block Diagram – 1GB S1# S0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS2 DM2 DM CS# DQS DQ16 DQ DQ17 DQ DQ18 ...
Page 7
... DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...
Page 8
Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the ...
Page 9
... RC = minimum RC allowed; change only during Active READ, or WRITE commands Notes Value calculated as one module rank in this operating condition; all other module ranks are calculated Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80b57837/Source: 09005aef80b577fa DDAF16C64_128x64H.fm - Rev. E 10/06 EN ...
Page 10
... RC = minimum RC allowed; control inputs change only during Active READ, or WRITE commands Notes Value calculated as one module rank in this operating condition, and all other module ranks are calculated Value calculated reflects all module ranks in this operating condition. Capacitance Micron encourages designers to simulate the performance of the module to achieve optimum values ...
Page 11
... AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR component data sheets. Component specifications are available on Micron’s Web site: ucts/dram/ddr. Module speed grades correlate with component speed grades as shown in Table 12. Table 12: Module and Component Speed Grades Module Speed Grade ...
Page 12
Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...
Page 13
... Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of column addresses on assembly 5 Number of physical ranks on DIMM 6 Module data width 7 Module data width (continued) 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CAS latency = 3) 10 SDRAM access from clock, 11 Module configuration type 12 ...
Page 14
... SPD revision 63 Checksum for bytes 0–62 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD 95–98 Module serial number 99–127 Manufacturer-Specific data (RSVD) PDF: 09005aef80b57837/Source: 09005aef80b577fa DDAF16C64_128x64H ...
Page 15
... TYP TYP TYP 63.60 (2.504) TYP BACK VIEW U10 U11 U12 U13 U16 15 Module Dimensions U6 31.90 (1.256) 31.60 (1.244) 20.00 (0.787) TYP PIN 199 U14 PIN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 3.80 (0.150) MAX 1 ...
Page 16
... TYP BACK VIEW U10 U11 U12 U14 U15 U16 ® 16 Module Dimensions U17 31.90 (1.256) 31.60 (1.244) 20.00 (0.787) TYP PIN 199 PIN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 3.80 (0.150) MAX 1 ...