pdm41024sa10tty ETC-unknow, pdm41024sa10tty Datasheet - Page 8

• Manufacturer Part Number: pdm41024sa10tty
• Description: 1 Megabit Static Ram 128k X 8-bi
• Manufacturer: ETC-unknow

8
Low V
Data Retention Electrical Characteristics (LA Version Only) for JEDEC Version
NOTES: (For three previous Electrical Characteristics tables)
Ordering Information
Symbol Parameter
I
CCDR
t
V
t
CDR
R
DR
(3)
CC
1. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured 200 mV from steady state voltage.
2. At any given temperature and voltage condition, t
3. This parameter is sampled.
4. WE is high for a READ cycle.
5. The device is continuously selected. All the Chip Enables are held in their active state.
6. The address is valid prior to or coincident with the latest occurring Chip Enable.
7. Vcc = 5V
Device Type
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
XXXXX
Data Retention Waveform
for Retention Data
CE1
CE2
V CC
V
V
V
V
Power
5%.
IH
IH
IL
IL
X
Speed
XX
Package
Type
t
CDR
X
Temp. Range
4.5V
Process
X
Data Retention Mode
CE1
CE2
V
or
HZCE
V DR
V
IN
DR
0.2V
0.2V
Container
Preferred
Shipping
V
is less than t
V
V
CC
CC
SS
X
Test Conditions
– 0.2V
+ 0.2V
– 0.2V or
4.5V
LZCE
SA
LA
PDM41024 - 1 Meg (128Kx8) Static RAM
Blank Tubes
TR
TY
Blank
I
A
TSO 32-pin 300-mil Plastic SOJ
SO
T
10
12
15
(use 15 ns for slower designs)
.
V
V
t
Standard Power
Low Power
Tape & Reel
Tray
Industrial (-40 to +85 C)
Automotive (-40 to +105 C)
32-pin 400-mil Plastic SOJ
32-pin Plastic TSOP (I)
Commercial Only
Commercial (0 to +70 C)
R
CC
CC
= 2V
= 3V
Min.
t
—
—
RC
2
0
DON'T CARE
Typ.
—
—
—
—
—
4/09/98 - Rev. 3.3
PDM41024
Max.
500
750
—
—
—
Unit
ns
ns
V
A
A