tsm35n03 Taiwan Semiconductor Company, Ltd. (TSC), tsm35n03 Datasheet
tsm35n03
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tsm35n03 Summary of contents
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... Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Part No. Package TSM35N03CP RO TO-252 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V @4.5V. GS Pulsed Drain Current, V @4.5V ...
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... I = 35A 10V iss V = 15V 0V oss f = 1.0MHz C rss t d(on 15V 15Ω 1A 10V, D GEN t d(off 24Ω 2/6 TSM35N03 25V N-Channel MOSFET Min Typ Max 1.0 1.6 3 ±100 -- -- 1 9 6.5 8 0. 1180 -- -- ...
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... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM35N03 25V N-Channel MOSFET Transfer Characteristics Gate Charge Version: A07 ...
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... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient o ( unless otherwise noted) 4/6 TSM35N03 25V N-Channel MOSFET Threshold Voltage Version: A07 ...
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... Marking Diagram SOT-252 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 5/6 TSM35N03 25V N-Channel MOSFET TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN A 2.3BSC 0.09BSC A1 4.6BSC 0.18BSC B 6.80 7.20 0.268 C 5 ...
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... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 25V N-Channel MOSFET Notice 6/6 TSM35N03 Version: A07 ...