tsm35n03 Taiwan Semiconductor Company, Ltd. (TSC), tsm35n03 Datasheet - Page 2

• Manufacturer Part Number: tsm35n03
• Description: 25v N-channel Mosfet
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Electrical Specifications
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
b
c
(Ta = 25
V
V
V
V
V
V
V
V
I
V
V
V
f = 1.0MHz
V
I
R
S
D
o
C unless otherwise noted)
GS
DS
GS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
= 20A, V
= 1A, V
= 24Ω
= V
= 24V, V
≥5V, V
= 10V, I
= 15V, I
= 15V, V
= 0V, I
= 4.5V, I
= 10V, I
= 10V
= 15V, R
= ±20V, V
Conditions
GS
, I
GEN
D
GS
GS
D
D
D
D
= 250uA
D
GS
GS
= 250uA
L
= 10V,
= 10V
= 35A
= 35A,
= 30A
= 0V
= 30A
= 15Ω,
DS
= 0V
= 0V,
= 0V
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Symbol
R
V
BV
I
t
t
I
C
GS(TH)
I
D(ON)
DS(ON)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
oss
iss
rss
DSS
fs
gd
r
gs
f
g
25V N-Channel MOSFET
Min
1.0
25
35
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1180
Typ
0.87
270
145
1.6
9.5
6.5
3.6
12
10
12
32
--
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3
4
6
TSM35N03
±100
Max
3.0
1.0
8.5
1.5
13
25
10
65
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Version: A07
Unit
mΩ
nA
uA
nC
nS
pF
V
V
A
S
V