tpcp8006 TOSHIBA Semiconductor CORPORATION, tpcp8006 Datasheet
tpcp8006
Available stocks
Related parts for tpcp8006
tpcp8006 Summary of contents
Page 1
... V GSS 0.168 150 °C ch −55 to 150 T °C stg 1 TPCP8006 Unit: mm 0.33 ± 0.05 0. 0.475 0. 0.65 2.9 ± 0.1 A 0.8 ± 0.05 0.025 S S ＋0.1 0.17 ± 0.02 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.11 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN ⎯ ...
Page 2
... Year of manufacture (The last digit of the year) Symbol Max Unit R 74.4 °C/W th (ch-a) R 148.8 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8t Unit: (mm Ω 9 TPCP8006 FR-4 25.4 × 25.4 × 0.8t Unit: (mm) (b) 2008-10-22 ...
Page 3
... Duty ≤ 1 μ ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP 9 DSF TPCP8006 Min Typ. Max ⎯ ⎯ ±100 = 0 V ⎯ ⎯ ⎯ 20 ⎯ 8 ⎯ 0.5 1.2 ⎯ 9.5 13.7 ⎯ 6 ⎯ ...
Page 4
... Drain−source voltage V 1 0.8 0.6 0.4 0.2 2 2.5 3 Gate−source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCP8006 I – 1.9 Common source Ta = 25°C Pulse test 1.8 1.7 1.6 1 1.4 V 0.8 1.2 1 – Common source Ta = 25°C Pulse test 4 ...
Page 5
... 1mA Pulse test 0 −80 −40 100 (V) Ambient temperature Common source 9 25°C Single Pulse test 160 0 5 TPCP8006 I – Common source Ta = 25°C Pulse test − −0.4 −0.6 −0.8 −1 −1.2 ( – Ta ...
Page 6
... I D max (pulsed Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain−source voltage V DS − th(j− Pulse width t (s) w 100 (V) 6 TPCP8006 (2) (1) Single pulse 100 1000 2008-10-22 ...
Page 7
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8006 20070701-EN GENERAL 2008-10-22 ...