tpcp8006 TOSHIBA Semiconductor CORPORATION, tpcp8006 Datasheet - Page 5

• Manufacturer Part Number: tpcp8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
2.0
1.5
0.5
20
16
12
1
4
0
8
0
0.01
−80
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
V GS = 2.5 V
−40
Drain−source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (
0.1
40
4.5 V
0
R
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
t = 5 s
DS (ON)
C – V
P
board (a)(Note 2a)
board (b) (Note 2b)
D
80
40
1
– Ta
I D = 2.3,4.5,9.1 A
DS
– Ta
80
C rss
I D = 2.3,4.5,9.1 A
DS
120
10
C oss
C iss
°
C)
(V)
120
160
160
100
5
100
0.1
1.6
1.2
0.8
0.4
10
24
18
12
1
2
0
6
0
−80
0
0
V DS
Common source
I D = 9.1 A
Ta = 25°C
Single Pulse test
5
Common source
V DS = 10 V
I D = 1mA
Pulse test
−0.2
Drain−source voltage V
−40
Ambient temperature Ta (
3
Total gate charge Q
10
Dynamic input/output
1
−0.4
0
characteristics
I
4 V
DR
V
th
8 V
−0.6
– V
40
20
0
– Ta
DS
−0.8
V DD = 16 V
80
g
DS
V GS = −1 V
Common source
Ta = 25°C
Pulse test
V GS
(nC)
30
°
(V)
C)
120
−1
TPCP8006
2008-10-22
−1.2
160
40
12
9
6
3
0