tpcp8504 TOSHIBA Semiconductor CORPORATION, tpcp8504 Datasheet

no-image

tpcp8504

Manufacturer Part Number
tpcp8504
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High Speed Switching Applications
DC-DC Converter Applications
Absolute Maximum Ratings
High DC current gain : h
Low collector-emitter saturation : V
High-speed switching : t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation (Note 2)
Junction temperature
Storage temperature range
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Pulse (Note 1 )
DC (Note 1)
t = 10s
f
DC
FE
= 25 ns (typ.)
TOSHIBA Transistor Silicon NPN Epitaxial Type
= 400 to 1000 (I
(Ta = 25°C)
CE (sat)
Symbol
V
V
V
TPCP8504
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
j
= 0.12 V (max)
C
= 0.2 A)
−55 to 150
Rating
150
2.0
3.5
0.2
2.8
1.2
20
10
7
1
Unit
°C
°C
W
V
V
V
A
A
2
)
Weight: 0.017 g (typ.)
JEDEC
JEITA
TOSHIBA
0.475
1.Collector
2.Collector
3.Collector
4.Base
S
0.33±0.05
8
1
0.025
0.65
2.9±0.1
5.Emitter
6.Collector
7.Collector
8.Collector
0.17±0.02
0.05
S
M
5
4
2-3V1A
TPCP8504
A
2006-11-13
B
1.12
1.12
0.28
0.28
A
0.8±0.05
+0.13
+0.13
+0.1
+0.1
-0.11
-0.11
0.05
-0.12
-0.12
Unit: mm
M
B

Related parts for tpcp8504

tpcp8504 Summary of contents

Page 1

... Symbol Rating Unit CBO CEO EBO 1.2 T 150 °C j −55 to 150 T °C stg 1 TPCP8504 Unit: mm 0.33±0. 0.475 0. 0.65 2.9±0.1 A 0.8±0.05 0.025 S +0.1 S 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 5.Emitter 0.28 1.Collector -0.11 6.Collector 2.Collector 7.Collector 3.Collector 8 ...

Page 2

... Ω stg = − VCC RL Output IB1 Input IB2 2 TPCP8504 (Note 4) 8  7  6   5 8504 Type ※ 1  2  3  4 Lot No. (Weekly code) Min Typ. Max Unit ⎯ ⎯ 100 nA ⎯ ⎯ 100 nA ⎯ ...

Page 3

... Common emitter β Single nonrepetitive pulse 1 0.1 10 0.001 −55 1.4 1.2 1.0 0.8 0.6 0.4 0 1.6 (V) Ambient temperature Ta (°C) 3 TPCP8504 h – −55 0.01 0 Collector current I ( – (sat −55°C 100°C 25°C 0.01 0 Collector current I ( – Ta ...

Page 4

... Collector−emitter voltage – Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 0 Pulse width t (s) w 100 (V) 4 TPCP8504 2 ) 100 1000 2006-11-13 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPCP8504 20070701-EN 2006-11-13 ...

Related keywords